1. The board features CoolGaN™ 600V e-mode HEMTs, CoolMOS™ C7 Gold superjunction MOSFET and EiceDRIVER™ gate driver ICs. The input voltage range of the board is between 90 to 265V AC, while the output voltage is 390V DC. All power components are surface mount devices (SMD), enabling faster and cheaper assembly process.
2. Super J MOS ® S2 Series; Super J MOS ® S2FD Series (Built-in high-speed diode type); SuperFAP-E 3 Series; Super FAP-E 3S Series (Low Qg type); SuperFAP-G Series; SuperFAP-G Series (Built-in high-speed diode type) Super J MOS ® S2 Series.
3. Mosfet 600v Mosfet OSEN S7905 MOSFET P-Channel NPN Transistor Voltage Regulator US $0.10-$0.11/ Piece 1 Piece (Min Order).
4. 650V MOSFET applications. Wolfspeed’s 650V SiC MOSFETs are built for the demands of today’s cutting-edge technology. From onboard chargers (OBCs) in electric vehicles (EVs) to uninterruptible power supplies (UPSes) and micro-inverters, Wolfspeed’s 650V SiC MOSFETs are rugged enough, reliable enough, and powerful enough for all applications.

• Mosfet 600v 100a
• Infineon Coolmos

This 2.5kW CCM full-bridge PFC evaluation board utilizes the advantages of Infineon’s CoolGaN™ technology to boost system efficiency above 99 percent for efficiency-critical applications such as server power supplies or telecom rectifiers. The board features CoolGaN™ 600V e-mode HEMTs, CoolMOS™ C7 Gold superjunction MOSFET and EiceDRIVER™ gate driver ICs.

Mosfet 600v 100a

The input voltage range of the board is between 90 to 265V_AC, while the output voltage is 390V_DC. All power components are surface mount devices (SMD), enabling faster and cheaper assembly process.

Infineon Coolmos

600V Half Bridge MOSFET or IGBT Driver General Description The MIC4608 is a 600V Half Bridge IGBT or MOSFET driver. The MIC4608 features a 450ns propagation delay including a 200ns input filtering time to prevent unwanted pulses. The low-side and high-side gate drivers are independently controlled (with shoot thru protection).